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Company Profile

MINCHENG

Focused, professional, and dedicated to power devices
Provide high-quality products and services
Sichuan Mincheng Electronics Co., Ltd. was established in 2017 and is currently located in Chengdu University of Electronic Science and Technology Science Park. It is a high-tech enterprise dedicated to the design, sales, and application services of power devices.

The company has developed a full range of SJ-MOSFET and medium voltage MOSFET with high performance and reliability; New generation SUPER-IGBT and seventh generation Trench FS IGBT; And vehicle grade high-voltage SIC MOSFET/SBD. Mainly used in photovoltaic inverters PCS、 Charging stations OBC、BMS、MPPT、 Motor drives, frequency converters, industrial power supplies, adapters, household appliances, and other consumer, industrial control, and automotive fields.

MC-Power
Semiconductor

  • Years

    Date Of Establishment

  • ⬆

    Patent

  • +

    Core Product

Company culture

  • Mission

    Creating a Better Life

  • Target

    Specialization, branding, and internationalization

  • Concept

    Fast, pragmatic, innovative, and outstanding

  • Positioning

    High end power semiconductor device provider

Development history

  • 2025

    1、Full series of SGT, SJ-MOS, and IGBT. 2、Full series of SiC MOS. 3、Initiated specialty packaging line.

  • 2024

    1、Focused on developing top-side cooling packaging; 950V SJ-MOS, completed partial product development. 2、SiC MOS obtained the AEC-Q101 certification. 3、Awarded the title of "Specialized and Sophisticated SME" in Sichuan Province.

  • 2023

    1、Finalized 75A 650V second-generation SUPER-IGBT. 2、Successfully developed T7 Trench FS insulated gate product series and 1200V 150A module products. 3、Company obtained certifications as "Technology-based SME," "High-tech Enterprise," and "Innovative SME."

  • 2022

    1、Successfully developed 30A 650V SUPER-IGBT. 2、Collaboratively developed low gate-drive voltage, high-robustness SiC MOS, entering trial production. 3、Collaboratively developed third-generation SJ-MOS chips, completing tape-out and entering small-scale production. 4、Collaboratively developed sixth-generation micro pattern trench IGBT.

  • 2021

    1、After three years of collaborative development, the second-generation SUPER-IGBT completed tape-out and entered trial production. 2、Automotive-grade MCR chips entered trial production. 3、Fast recovery SJ-MOS series chips began trial production and volume production.

  • 2020

    1、Collaboratively developed third-generation SiC devices. 2、Completed SJ-MOS series, began collaborative development of fast recovery SJ-MOS series. 3、Explored and began developing the 2.5-generation SUPER-IGBT process platform.

  • 2019

    1、Completed 800V development and qualification for the second-generation SJ-MOS using Multi-EPI process. 2、Produced 250V medium-voltage products using SGT process.

  • 2018

    1、Completed chip design finalization for VDMOS series specifications. 2、Completed mass production qualification for the first-generation Multi-EPI process SJ-MOS 500–650V chips. 3、Initiated mass production of medium- and low-voltage SR-MOS using SGT process. 4、Initiated development of the first-generation SUPER-IGBT.

  • 2016

    Developed the DFN5x6 package with SGT process, 60V 6mR product, applied in MOTO Z 5V6A fast charging (turbine fast charging technology known as the "world's fastest charging technology").

  • 2007

    Engaged in the design, packaging, and sales of power devices.

  • 2003

    The Microelectronics Division of Xiamen Shangmingda Electromechanical Industry Co., Ltd. was established, specializing in semiconductor packaging and testing.

  • 2025

  • 2024

  • 2023

  • 2022

  • 2021

  • 2020

  • 2019

  • 2018

  • 2016

  • 2007

  • 2003

Honorary qualifications

  • Sichuan Province's "Specialized, Refined, Unique and New" Small and Medium sized Enterprises

  • Power Device Industry Emerging Award

  • 高新技术企业证书

  • 管理体系认证证书

  • 管理体系认证证书